Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates
- Lawrence Berkeley Lab., CA (United States)
- Sandia National Labs., Albuquerque, NM (United States)
The configurations of misfit dislocations in In{sub 0.2}Ga{sub 0.8}As/GaAs(001) heterostructures grown on slightly misoriented substrates was investigated by transmission electron microscopy (TEM). Layers 6 nm, 20 nm and 40 nm thick were grown by MBE. The substrate was tilted in [110], [110], [120], [210] and [010] directions at angles between 0{degree} and 10{degree}. Only in the 40 nm thick layers networks of 60{degree} and 90{degree} dislocations were formed. Misfit dislocations were found at the interface in <110> directions. In the substrate tilting range between 0{degree} and 4{degree} the changes in dislocation density can be explained by the different character of {alpha} and {beta} dislocations. For it substrate tilting above 60 the different dislocation sets show an increased anisotropy. The misfit dislocations at the interface were decorated by In atoms. The influence of three-dimensional crystal growth on increasing surface roughness is discussed.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789; AC03-76SF00098
- OSTI ID:
- 10133453
- Report Number(s):
- SAND-92-1757C; CONF-921101-96; ON: DE93007578
- Resource Relation:
- Conference: 16. Materials Research Society (MRS) fall meeting,Boston, MA (United States),30 Nov - 5 Dec 1992; Other Information: PBD: [1992]
- Country of Publication:
- United States
- Language:
- English
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