Effects of substrate misorientation on ordering in GaAs sub 0. 5 P sub 0. 5 grown by organometallic vapor phase epitaxy

Journal Article · Mon Dec 03 00:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103834· OSTI ID:5998194

Chen, G S; Jaw, D H; Stringfellow, G B ^[1]

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1. Department of Materials Science and Engineering, University of Utah, Salt Lake City, UT (USA) Department of Electrical Engineering, University of Utah, Salt Lake City, UT (USA)

Effects of (001) GaAs substrate misorientation on the formation of the group V sublattice {l brace}111{r brace} (CuPt) ordered structure are studied for the first time for GaAs{sub 0.5}P{sub 0.5}. It is found that the direction of substrate misorientation has a strong effect on the determination of which variants are formed. Two of the four possible ordered variants appear for epilayers grown on exact (001) substrates. The same two variants also appear for the epilayers grown on the (001) substrates misoriented by 6{degree} towards (110). Only one variant appears on epilayers grown on (001) substrates misoriented by 6{degree} towards the ({bar 1}10) direction. Most significantly, all the ordered-induced diffraction spots in GaAsP are found to occur on the (110) cross section. Thus, the variants found in GaAsP are exactly the same as for GaInP, an alloy with CuPt ordering on the group III sublattice. This result is contradictory to expectations based on the bond-length model proposed previously for GaInP alloys. In addition, for all the 6{degree} misorientated GaAs substrates, independent of the direction of misorientation, large ordered domains with dimensions on the order of micrometers are found in the GaAsP alloys. This has not been reported for other ternary or quaternary alloy systems.

• DOE Contract Number: FG02-84ER45061
• OSTI ID: 5998194
• Journal Information: Applied Physics Letters; (USA), Vol. 57:23; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM ARSENIDES
VAPOR PHASE EPITAXY
GALLIUM PHOSPHIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL LATTICES
ORGANOMETALLIC COMPOUNDS
SORPTIVE PROPERTIES
SUBSTRATES
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CRYSTAL STRUCTURE
DEPOSITION
EPITAXY
GALLIUM COMPOUNDS
ORGANIC COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SURFACE COATING
SURFACE PROPERTIES
360602* - Other Materials- Structure & Phase Studies