Compositional disordering of GaAs/AlGaAs multiple quantum wells using ion bombardment at elevated temperatures
Journal Article
·
· Appl. Phys. Lett.; (United States)
A new method has been developed for compositional mixing of heterostructures by ion bombardment at elevated temperatures. Complete mixing of a 1-..mu..m-thick GaAs/AlGaAs 40-period multiple quantum well layer has been achieved by bombardment with 380 keV Ne/sup +/ ions for 1 h with the sample at 700 /sup 0/C. This temperature is much lower than the annealing temperatures used in other vacancy-enhanced disordering techniques, and even lower temperatures and shorter durations should be possible. Compositional disordering is verified by sputter-profile Auger electron spectroscopy and transmission electron microscopy. Complete mixing is also demonstrated by optical transmission spectra of the disordered material, which exhibit the same band edge as a uniform alloy with the average aluminum mole fraction of the multiple quantum well layer.
- Research Organization:
- Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
- OSTI ID:
- 6780443
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 53:17; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
CHEMICAL COMPOSITION
COLLISIONS
ELECTRON SPECTROSCOPY
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HIGH TEMPERATURE
ION COLLISIONS
IONS
JUNCTIONS
KEV RANGE
MIXING
NEON IONS
NEUTRAL-PARTICLE TRANSPORT
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
SPUTTERING
VERY HIGH TEMPERATURE
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
ATOM TRANSPORT
AUGER ELECTRON SPECTROSCOPY
CHARGED PARTICLES
CHEMICAL COMPOSITION
COLLISIONS
ELECTRON SPECTROSCOPY
ENERGY RANGE
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
HIGH TEMPERATURE
ION COLLISIONS
IONS
JUNCTIONS
KEV RANGE
MIXING
NEON IONS
NEUTRAL-PARTICLE TRANSPORT
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RADIATION TRANSPORT
SEMICONDUCTOR JUNCTIONS
SPECTROSCOPY
SPUTTERING
VERY HIGH TEMPERATURE