Use of tertiarybutylarsine in the fabrication of GaAs/AlGaAs quantum wells and quantum well lasers

Journal Article · Mon Aug 13 04:00:00 EDT 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.103595· OSTI ID:6376571

Hummel, S G; Beyler, C A; Zou, Y; Grodzinski, P; Dapkus, P D ^[1]

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1. Department of Electrical Engineering, University of Southern California, Los Angeles, CA (USA) Center for Photonic Technology, University of Southern California, Los Angeles, CA (USA)

Tertiarybutylarsine was used in the growth of GaAs and AlGaAs by metalorganic chemical vapor deposition over a range of compositions and V/III ratios. GaAs layers were obtained with both {ital n}- and {ital p}-type background carrier concentrations in the low 10{sup 14} cm{sup {minus}3} range. AlGaAs was grown at 20, 30, and 50% compositions, and photoluminescence of the Al{sub 0.2}Ga{sub 0.8}As indicates high quality material with full width half maximum (FWHM) values of the peaks being comparable to arsine-grown AlGaAs. High quality multiple Al{sub 0.3}Ga{sub 0.7}As/GaAs quantum wells of various widths produced photoluminescence spectra with FWHM values comparable to arsine-grown samples. Minority-carrier lifetimes as long as 400 ns were measured for a heterostructure of 0.5 {mu}m GaAs with Al{sub 0.3}Ga{sub 0.7}As barrier layers. Graded index separate confinement heterostructure lasers were fabricated, and broad- area test results of these devices produced threshold current densities as low as 186 A/cm{sup 2}.

• OSTI ID: 6376571
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:7; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CARRIER LIFETIME
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASERS
LIFETIME
LUMINESCENCE
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE COATING
THRESHOLD CURRENT