Tertiarybutylarsine for metalorganic chemical vapor deposition growth of high purity, high uniformity films

Journal Article · Wed Jan 01 04:00:00 EST 1997 · Journal of Electronic Materials

DOI:https://doi.org/10.1007/s11664-997-0131-7· OSTI ID:458641

Chui, H C; Biefeld, R M; Hammons, B E ^[1]

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1. Sandia National Lab., Albuquerque, NM (United States); and others

We have performed an extensive study of GaAs, Al{sub 0.22}Ga{sub 0.78}As, and In{sub 0.16}Ga{sub 0.84}As grown using tertiarybutylarsine (TBA) in an ultra-high purity metalorganic chemical vapor deposition multi-wafer reactor. Key results include: high purity TBA AlGaAs layers with the lowest p-type carrier concentrations (4 x 10{sup 14} cm{sup -3}) reported to date; 4K photoluminescence bound exciton linewidths as narrow as 4.3 meV; C, O, Si, and S concentrations below the secondary ion mass spectrometry detection limit; and InGaAs/GaAs quantum wells with 20K PL linewidths as narrow as 3.5 meV. We also observe a strong dependence of growth rates and doping efficiency on group-V partial pressure, possibly due to a competition between excess group-V species and group-III or Si species for group-III surface sites. Finally, we demonstrate record uniformity using TBA with an AlGaAs thickness variation of only {+-}1.4% across a 4 inch wafer. 23 refs., 9 figs.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 458641
• Journal Information: Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 1 Vol. 26; ISSN JECMA5; ISSN 0361-5235
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
ALUMINIUM COMPOUNDS
CARRIER DENSITY
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
EMISSION SPECTRA
EXCITONS
GALLIUM ARSENIDES
INDIUM COMPOUNDS
ORGANOMETALLIC COMPOUNDS
PHOTOLUMINESCENCE
QUANTUM ELECTRONICS
SILICON
TEMPERATURE DEPENDENCE