GaAs solar cell with GaInP window grown by all metalorganic source MOVPE

Book · Sat Dec 31 04:00:00 EST 1994

OSTI ID:191143

Matsubara, Hideki; Tanabe, Tatsuya; Saegusa, Akihiko; Takagishi, Shigenori; Shirakawa, Tsuguru ^[1]

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1. Sumitomo Electric Industries, Ltd., Itami, Hyogo (Japan). Basic High-Technology Labs.

Tertiarybutylarsine (tBAs) and tertiarybutylphosphine (tBP) are expected as safe alternatives to conventional hazardous hydrides, AsH{sub 3} and PH{sub 3}. The authors have applied these safer metalorganic precursors to the GaAs solar cell growth and have obtained the cell efficiency of 23.3% (under AM1.5G{center_dot}100mW/cm{sup 2}, V{sub oc} = 1.025V, J{sub sc} = 26.9mA/cm{sup 2}, FF = 0.843, the conversion efficiency for active area is 25.1%). The cell consists of the GaAs single junction and the lattice-matched GaInP window, and was grow using only metalorganic precursors. The external quantum efficiency of the GaInP window cell in the shorter wavelength range is improved considerably, compared to the previous GaAs cell with AlGaAs window grown with all metalorganic source MOVPE. This improvement is consistent with the results of the interface recombination velocity estimation for GaInP/GaAs interface and AlGaAs/GaAs interface. These results demonstrate that all metalorganic source MOVPE for the GaAs solar cell is a safe and promising alternative to the conventional MOVPE using hydride sources.

• OSTI ID: 191143
• Report Number(s): CONF-941203--; ISBN 0-7803-1459-X
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ANTIREFLECTION COATINGS
CURRENT DENSITY
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
EXPERIMENTAL DATA
FABRICATION
FILL FACTORS
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDE SOLAR CELLS
LIFETIME
MAGNESIUM FLUORIDES
ORGANOMETALLIC COMPOUNDS
PERFORMANCE
QUANTUM EFFICIENCY
SPECTRAL RESPONSE
VAPOR PHASE EPITAXY
ZINC SULFIDES