2{times}10{sup 6}cm{sup 2}/Vs electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine

Journal Article · Mon Jan 01 04:00:00 EST 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116462· OSTI ID:277137

Chui, H C; Hammons, B E; Harff, N E; Simmons, J A; Sherwin, M E ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

We demonstrate the metalorganic chemical vapor deposition (MOCVD) growth of two-dimensional electron gases (2DEGs) with electron mobilities up to 2.0{times}10{sup 6} cm{sup 2}/Vs at 0.3 K. These are the highest mobilities to date for MOCVD materials, and were achieved using a safer replacement precursor for arsine, tertiarybutylarsine (TBA). For structures grown using arsine, we obtained a maximum mobility of 1.0{times}10{sup 6} cm{sup 2}/Vs, which although comparable to the best by MOCVD to date, is half that obtained using TBA. Our studies on thick GaAs and AlGaAs layers indicate that the use of TBA in place of arsine reduces both the carbon and donor impurity concentrations. Thus, TBA is not only a safe alternative to arsine, but also produces significantly purer films. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 277137
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 68; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CARRIER DENSITY
CARRIER MOBILITY
CHEMICAL VAPOR DEPOSITION
CVD
EPITAXY
GALLIUM ARSENIDES
QUANTUM WELLS