Composite fermions in 2 x 10{sup 6} cm{sup 2}/Vs mobility A1GaAs/GaAs heterostructures grown by MOCVD
Recent growth by MOCVD (metalorganic chemical vapor deposition) of 2.0x10{sup 6} cm{sup 2}/Vs mobility heterostructures are reported. These mobilities, the highest reported to date, are attributed to use of tertiarybutylarsine as the arsenic precursor. Measurements in tilted magnetic fields of the fractional quantum Hall effect states near filling factor 3/2 are consistent with a spin-split composite fermion (CF) model proposed earlier. Extracted values of the product of the CF g-factor and CF effective mass agree with values previously obtained for MBE samples.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 467127
- Report Number(s):
- CONF-9609125--1; ON: DE97004472
- Country of Publication:
- United States
- Language:
- English
Similar Records
Composite fermions in 2 {times} 10{sup 6} cm{sup 2}/Vs mobility AlGaAs/GaAs heterostructures grown by MOCVD
2{times}10{sup 6}cm{sup 2}/Vs electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine
Room-temperature continuous operation of p-n Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure lasers grown on Si
Technical Report
·
Thu Aug 01 00:00:00 EDT 1996
·
OSTI ID:270799
2{times}10{sup 6}cm{sup 2}/Vs electron mobility by metalorganic chemical vapor deposition with tertiarybutylarsine
Journal Article
·
Sun Dec 31 23:00:00 EST 1995
· Applied Physics Letters
·
OSTI ID:277137
Room-temperature continuous operation of p-n Al/sub x/Ga/sub 1-//sub x/As-GaAs quantum well heterostructure lasers grown on Si
Journal Article
·
Mon Aug 31 00:00:00 EDT 1987
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6410730