Fabrication of optical channel waveguides in the GaAs/AlGaAs system by MeV ion beam bombardment

Conference · Sat Dec 31 04:00:00 EST 1994

OSTI ID:70789

Taylor, T; Ila, D; Zimmerman, R L ^[1]; Ashley, P R ^[2]; Poker, D B ^[3]

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1. Alabama A and M Univ., Normal, AL (United States). Dept. of Physics
2. Army Missile Command, Redstone Arsenal, AL (United States). Weapons Science Directorate
3. Oak Ridge National Lab., TN (United States)

We have fabricated optical channel waveguides in planar GaAs/AlGaAs waveguides using 10 MeV oxygen ions at a fluence of 3 {times} l0{sup 13} and 3 {times} l0{sup 14} ions/cm{sup 2}. Although disordering o GaAs/AlGaAs quantum well structures has previously been reported, to the best of the authors` knowledge the fabrication of channel waveguides using high energy oxygen bombardment has not been demonstrated in this material system. This technique may provide a totally new concept of localized material modifications in GaAs/AlGaAs waveguides by creating compositional disordered regions that act as optical confinement channels. The masking technique used to provide selective disordering of the planar waveguide structures will be presented. Optical measurements were performed on the channel waveguides at a wavelength of 1.3 {mu}m.

• Research Organization: Oak Ridge National Lab., TN (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 70789
• Report Number(s): CONF-941144--156; ON: DE95008973; CNN: G rii880291
• Country of Publication: United States
• Language: English

Related Subjects

07 ISOTOPE AND RADIATION SOURCES
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALUMINIUM ARSENIDES
FABRICATION
GALLIUM ARSENIDES
ION BEAMS
OXYGEN IONS
WAVEGUIDES