Extension of lasing wavelengths beyond 0. 87 mm in GaAs/Al/sub x/Ga/sub 1-x/As double-heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy

Journal Article · Fri May 01 04:00:00 EDT 1981 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.92496· OSTI ID:6774794

Tsang, W T

We demonstrate that the lasing wavelengths of GaAs/Al/sub x/Ga/sub 1-x/As double-heterostructure (DH) lasers can be extended beyond 0.87--0.94 mm without significant increase in the current threshold by incorporating In into the GaAs active layer during molecular beam epitaxy. This shift permits the benefits of reduced optical fiber loss and wavelength multiplexing with 0.83 mm and using the same fibers. A reduction in averaged current-threshold density (from 800 to 700 A/cm/sup 2/) was obtained in those InGaAs/AlGaAs DH lasers that have the InGaAs active layer exactly lattice-matched to the AlGaAs cladding layers. As a result of the stress relief at the lattice-matched InGaAs/AlGaAs interfaces of these DH lasers, it may be possible to improve the reliability of the lasers operating at 0.88 mm.

• Research Organization: Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6774794
• Report Number(s): CONF-800880-
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 38:9; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CURRENT DENSITY
DOPED MATERIALS
ELECTRONIC EQUIPMENT
ELEMENTS
ENERGY LOSSES
EPITAXY
EQUIPMENT
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM
INTERFACES
LASERS
LAYERS
LOSSES
MATERIALS
METALS
MOLECULAR BEAMS
MULTIPLEXERS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
WAVEGUIDES
WAVELENGTHS