Low-threshold room-temperature double-heterostructure GaAs/sub 1-x/Sb/sub x/ Al/sub y/Ga/sub 1-y/As/sub 1-x/Sb/sub x/ injection lasers at 1-$mu$m wavelengths
Journal Article
·
· Appl. Phys. Lett., v. 27, no. 10, pp. 562-564
OSTI ID:4165416
Double-heterostructure (DH) injection lasers based on the GaAs$sub 1$/ sub -//subx/Sb/subx//Al/suby/Ga$sub 1$/sub -//suby/As$sub 1$/sub -//subx/Sb/subx/ system have been fabricated using liquid phase epitaxial growth techniques and operated at room temperature at wavelengths in the 1-$mu$m region. The observed room-temperature threshold current densities, as low as 2100 A cm$sup -2$, are comparable to those of GaAs/AlGaAs devices of similar geometry.
- Research Organization:
- Bell Telephone Laboratories, Holmdel, New Jersey 07733
- NSA Number:
- NSA-33-002866
- OSTI ID:
- 4165416
- Journal Information:
- Appl. Phys. Lett., v. 27, no. 10, pp. 562-564, Journal Name: Appl. Phys. Lett., v. 27, no. 10, pp. 562-564; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Continuous operation of 1.0-$mu$m-wavelength GaAs/sub 1-x/Sb/sub x/Al/sub y/ Ga/sub 1-y/As/sub 1-x/Sb/ sub x/ double-heterostructure injection lasers at room temperature
Threshold characteristics and extended wavelength operation of GaAs/1-x'//Al/sub y/Ga/sub 1-y/As/sub 1-x/Sb/sub x/ double-heterostructure lasers
Extension of lasing wavelengths beyond 0. 87 mm in GaAs/Al/sub x/Ga/sub 1-x/As double-heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy
Journal Article
·
Wed Dec 31 23:00:00 EST 1975
· Appl. Phys. Lett., v. 28, no. 1, pp. 19-21
·
OSTI ID:4128334
Threshold characteristics and extended wavelength operation of GaAs/1-x'//Al/sub y/Ga/sub 1-y/As/sub 1-x/Sb/sub x/ double-heterostructure lasers
Journal Article
·
Thu Sep 01 00:00:00 EDT 1977
· J. Appl. Phys.; (United States)
·
OSTI ID:7319757
Extension of lasing wavelengths beyond 0. 87 mm in GaAs/Al/sub x/Ga/sub 1-x/As double-heterostructure lasers by In incorporation in the GaAs active layers during molecular beam epitaxy
Journal Article
·
Fri May 01 00:00:00 EDT 1981
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6774794