Threshold characteristics and extended wavelength operation of GaAs/1-x'//Al/sub y/Ga/sub 1-y/As/sub 1-x/Sb/sub x/ double-heterostructure lasers
Journal Article
·
· J. Appl. Phys.; (United States)
A normalized threshold current density J/sub th//d = 4.0 kA cm-/sup 2/ ..mu..-/sup 1/ has been determined for pulsed broad-area room-temperature GaAs/1-x'/Sb/sub x'/Al/sub y/Ga/sub 1-y/As/sub 1-x/Sb/sub x/ DH lasers of length 380 ..mu..m over a range of active-layer thicknesses d. Thresholds as low as 1.2 kA cm-/sup 2/ and differential efficiencies up to 35% have been obtained in the wavelength range 0.99-1.06 ..mu..m. cw operation of stripe-geometry lasers is also described.
- Research Organization:
- Bell Telephone Laboratories, Holmdel, New Jersey 07733
- OSTI ID:
- 7319757
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:9; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
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Preparation of 1. 78-. mu. m wavelength Al/sub 0. 2/Ga/sub 0. 8/Sb/GaSb double-heterostructure lasers by molecular beam epitaxy
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Wed Dec 31 23:00:00 EST 1975
· Appl. Phys. Lett., v. 28, no. 1, pp. 19-21
·
OSTI ID:4128334
In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/InP DH lasers fabricated on INP (100) substrates
Journal Article
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Tue Jan 31 23:00:00 EST 1978
· IEEE J. Quant. Electron.; (United States)
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OSTI ID:6372967
Preparation of 1. 78-. mu. m wavelength Al/sub 0. 2/Ga/sub 0. 8/Sb/GaSb double-heterostructure lasers by molecular beam epitaxy
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Fri Jul 01 00:00:00 EDT 1983
· Appl. Phys. Lett.; (United States)
·
OSTI ID:5862187
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
EFFICIENCY
ELECTROLUMINESCENCE
EMISSION SPECTRA
ENERGY
FREQUENCY SELECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LUMINESCENCE
OPERATION
PNICTIDES
PULSE TECHNIQUES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD ENERGY
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
DOPED MATERIALS
EFFICIENCY
ELECTROLUMINESCENCE
EMISSION SPECTRA
ENERGY
FREQUENCY SELECTION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTION DIODES
LASERS
LUMINESCENCE
OPERATION
PNICTIDES
PULSE TECHNIQUES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SPECTRA
THRESHOLD ENERGY