Preparation of 1. 78-. mu. m wavelength Al/sub 0. 2/Ga/sub 0. 8/Sb/GaSb double-heterostructure lasers by molecular beam epitaxy
Journal Article
·
· Appl. Phys. Lett.; (United States)
As the losses due to Rayleigh scattering decrease at a rate of lambda/sup 4/ with increasing wavelength lambda, the future generation of optical fibers, light sources, and detectors may well be operating at still longer wavelength beyond 1.55 ..mu..m. The present letter reports the first preparation of Al/sub 0.2/Ga/sub 0.8/Sb/GaSb double-heterostructure (DH) lasers by molecular beam epitaxy (MBE) operating at 1.78 ..mu..m. For Al/sub x/Ga/sub 1-x/Sb with x< or approx. =0.1, room-temperature photoluminescent intensity and linewidth similar to those of bulk GaSb substrate of similar carrier concentration were obtained. The Al/sub 0.2/Ga/sub 0.8/Sb/GaSb DH laser wafers grown by MBE have smooth, featureless, mirror-reflecting surfaces. Reflection high-energy electron diffraction study shows that the abrupt Al/sub 0.2/Ga/sub 0.8/Sb/GaSb interfaces were atomically smooth. Initial threshold current measurements gave a pulsed threshold current density of 3.4 kA/cm/sup 2/ for a diode of 380 x 200 ..mu..m and an active GaSb layer of 0.33 ..mu..m.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5862187
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:1; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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· J. Appl. Phys.; (United States)
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Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
COHERENT SCATTERING
CURRENTS
DATA
DIFFRACTION
DIMENSIONS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
EPITAXY
EXPERIMENTAL DATA
FIBER OPTICS
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LINE WIDTHS
LUMINESCENCE
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
PULSES
QUANTITY RATIO
RADIATION DETECTORS
RADIATIONS
RAYLEIGH SCATTERING
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THICKNESS
THRESHOLD CURRENT
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
COHERENT SCATTERING
CURRENTS
DATA
DIFFRACTION
DIMENSIONS
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELECTRON DIFFRACTION
EPITAXY
EXPERIMENTAL DATA
FIBER OPTICS
GALLIUM ANTIMONIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
INFRARED RADIATION
JUNCTIONS
LASERS
LINE WIDTHS
LUMINESCENCE
MEASURING INSTRUMENTS
MEDIUM TEMPERATURE
MOLECULAR BEAM EPITAXY
NUMERICAL DATA
PHOTOLUMINESCENCE
PNICTIDES
PULSES
QUANTITY RATIO
RADIATION DETECTORS
RADIATIONS
RAYLEIGH SCATTERING
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THICKNESS
THRESHOLD CURRENT