In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/InP DH lasers fabricated on INP (100) substrates

Journal Article · Wed Feb 01 04:00:00 EST 1978 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1978.1069753· OSTI ID:6372967

Yamamoto, T ^[1]; Sakai, K; Akiba, S; Suematsu, Y

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1. KDD Research and Development Labs., Tokyo, Japan

In/sub 1-y/Ga/sub x/As/sub y/P/sub 1-x/InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25 to 1.35 ..mu..m at room temperature were fabricated on (100) oriented InP substrates. Low normalized threshold current density of 3 to 5 kA cm/sub -2/..mu../m/sub -1/ was obtained for broad contact lasers. The temperature dependence of the threshold current density and the lasing wavelength was measured between 90 and 300/sup 0/K. The temperature coefficient of the lasing wavelength was 5 A/K at room temperature. Continuous operation of more than 2000 h has been achieved with oxide-stripe structure lasers.

• OSTI ID: 6372967
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-14:2; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
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CURRENT DENSITY
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GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
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LASERS
PERFORMANCE
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PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE