Development of a thin AlGaAs solar cell

Technical Report · Wed Apr 01 04:00:00 EST 1987

OSTI ID:6773736

The objective of this work was the production of ultrathin 1.7 eV top cells for a mechanical tandem stack with silicon bottom cells. The unique aspect of our work was MOCVD growth of the AlGaAs cell on a germanium substrate, subsequently completely removed by selective etching. Important results include the identification of Ge autodoping and unintentional tandem cell formation (p-n junction formation in the Ge substrate) as materials-related problems. The former was solved by GaAs backside capping of the Ge, and the latter was obviated by substrate removal. A process for bonding to a glass superstrate, substrate removal by etching, and application of a back contact grid was developed. Working solar cells of GaAs and AlGaAs with thicknesses of 5 microns have been demonstrated.

• Research Organization: Spire Corp., Bedford, MA (USA); Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6773736
• Report Number(s): SAND-87-7098; ON: DE87009357
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
CONCENTRATOR SOLAR CELLS
DESIGN
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
EQUIPMENT
FILMS
GALLIUM ARSENIDE SOLAR CELLS
GERMANIUM
METALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
THIN FILMS