V-grooved AlGaAs/GaAs passivated PN junction

Conference · Fri May 01 04:00:00 EDT 1987

OSTI ID:6050074

Bailey, S G; Leon, R P; Arrison, A

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

• Research Organization: National Aeronautics and Space Administration, Cleveland, OH (USA). Lewis Research Center
• OSTI ID: 6050074
• Report Number(s): N-87-27541; NASA-TM-100138; E-3688; NAS-1.15:100138; CONF-870528-
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
CHEMICAL PREPARATION
DATA
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
EQUIPMENT
ETCHING
EXPERIMENTAL DATA
GALLIUM ARSENIDE SOLAR CELLS
INFORMATION
JUNCTIONS
NUMERICAL DATA
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
P-N JUNCTIONS
PASSIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADIATIONS
REFLECTIVITY
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SOLAR RADIATION
STELLAR RADIATION
SURFACE FINISHING
SURFACE PROPERTIES
SYNTHESIS