Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

Journal Article · Mon Oct 13 04:00:00 EDT 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.97491· OSTI ID:5237312

Leon, R P; Bailey, S G; Mazaris, G A; Williams, W D

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using metalorganic chemical vapor deposition. A wet chemical etching process was used to expose the intersecting (111)Ga and (1-bar1-bar1)Ga planes with 6 ..mu..m periodicity. Charge collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

• Research Organization: NASA Lewis Research Center, Cleveland, Ohio 44135
• OSTI ID: 5237312
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 49:15; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ABSORPTIVITY
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
ETCHING
FABRICATION
GALLIUM
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
JUNCTIONS
METALS
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANOMETALLIC COMPOUNDS
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
SURFACE FINISHING