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Ultrathin GaAs and AlGaAs solar cells

Conference · · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
OSTI ID:5489753
Techniques for making 3 to 10 micron thick AlGaAs and GaAs solar cells by stop etching are described. The method is to grow a normal structure with a 90% AlGaAs layer buried below the base. The emitter contact is formed and the cell bonded to a cover glass; the substrate is then etched away. The process and test results are given. Also described is a back surface reflector (BSR) for such a cell.
Research Organization:
Varian Associates Inc., Palo Alto, CA
OSTI ID:
5489753
Report Number(s):
CONF-820906-
Conference Information:
Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
Country of Publication:
United States
Language:
English