Theoretical study of SEUs in 0. 25-[mu]m fully-deleted CMOS/SOI technology

Conference · Thu Dec 01 00:00:00 EST 1994 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

OSTI ID:6762608

Brisset, C; Dollfus, P; Hesto, P ^[1]; Musseau, O; Leray, J L ^[2]

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1. Univ. Paris XI, Orsay (France). Inst. d'Electronique Fondamentale
2. CEA, Bruyeres-le-Chatel (France)

The authors present a theoretical study of the behavior of basic CMOS/SOI inverter and static memory cell struck by an energetic ion. This work is based on 3D Monte Carlo device simulation. CMOS cells are made up of ultra-thin SOI film 0.25 [mu]m MOSFETs without body ties operating in fully-depleted mode. the ion track is simulated by electron-hole pairs generation with an energy of 1 eV for each carrier. They took a particular care to quantify the radiation effect as a function of Linear Energy Transfer (LET) of the ion. After irradiation of the off-state N-MOS of the inverter, electrons in excess are drained-off by source and drain contacts. Due to the lack of hole contact, excess holes tend to remain accumulated in the channel initiating a parasitic bipolar transistor mechanism. The electron current, flowing from source to drain, discharges the output capacitor, which result in a transient upset. The recovery time is then controlled by recombination of excess holes. For memory cell, even after recombination of excess holes stored in the channel, the return to initial logic state could not be achieved, which constitutes a definitive single event upset (SEU). As this would occur for LET as low as 3 MeV cm[sup 2].mg[sup [minus]1], hardening techniques for 0.25 [mu]m CMOS/SOI devices are finally discussed.

• OSTI ID: 6762608
• Report Number(s): CONF-940726-; CODEN: IETNAE
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Vol. 41:6Pt1; Conference: 31. annual international nuclear and space radiation effects conference, Tucson, AZ (United States), 18-22 Jul 1994; ISSN 0018-9499
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
INTEGRATED CIRCUITS
PHYSICAL RADIATION EFFECTS
MOSFET
COMPUTERIZED SIMULATION
ELECTRICAL PROPERTIES
ERRORS
SPACE FLIGHT
THREE-DIMENSIONAL CALCULATIONS
ELECTRONIC CIRCUITS
FIELD EFFECT TRANSISTORS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SIMULATION
TRANSISTORS
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