High LET Single Event Upset Cross Sections For Bulk and SOI CMOS SRAMs
- Ion Beam Materials Research Laboratory, Sandia National Laboratories, PO Box 5800, MS-1056, Albuquerque, NM 87185-1056 (United States)
Electronics in spacecraft and satellites are exposed to high-energy cosmic radiation. In addition, terrestrial radiation can also affect earth-based electronics. To study the effects of radiation upon integrated circuits and to insure the reliability of electronic devices, cosmic and terrestrial radiations are simulated with ion beams from particle accelerators. A new, higher Linear Energy Transfer (LET) acceleration system for heavy ions has been developed at Sandia National Laboratories. Heavy ions from a 6.5 MV EN tandem Van de Graaff accelerator at 0.25 MeV/amu are injected into a two-stage Radio Frequency Quadrupole (RFQ) linac, which accelerates the ions to 1.9 MeV/amu. These ions together with those from the Brookhaven National Laboratory MP Tandem have been used to measure single event upset (SEU) cross sections as a function of LET for both bulk and Silicon on Insulator (SOI) Complementary Metal Oxide Semiconductor, Static Random Access Memories. The magnitudes of these cross sections indicate that the upsets in both the SOI and bulk parts are caused by OFF-drain strikes.
- OSTI ID:
- 20632598
- Journal Information:
- AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 680; ISSN APCPCS; ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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