Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry

Journal Article · Fri Jun 15 04:00:00 EDT 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.94660· OSTI ID:6752286

Mamine, T

The effects of active layer thickness on the astigmatism, the angle of far-field pattern width parallel to the junction, and the spectral envelope width of a gain guided laser with a narrow stripe geometry have been investigated analytically and experimentally. It is concluded that a large level of astigmatism, a narrow far-field pattern width, and a rapid convergence of the spectral envelope width are inherent to the gain guided lasers with thin active layers.

• Research Organization: Semiconductor Research Department, Semiconductor Group, Sony Corporation, Atsugi-Plant, 4-14-1 Asahi-cho, Atsugi-shi 243, Japan
• OSTI ID: 6752286
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 44:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
ANALYTICAL SOLUTION
DIMENSIONS
ELECTROMAGNETIC RADIATION
GAIN
LASER MATERIALS
LASER RADIATION
LASERS
LAYERS
MATERIALS
OPTICAL PROPERTIES
PHYSICAL PROPERTIES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SHAPE
THICKNESS