New class of gain guiding laser with a tapered-stripe structure
Journal Article
·
· J. Appl. Phys.; (United States)
A new class of gain guiding laser with a tapered-stripe structure has been developed which exhibits a linear dependence of light output on cw current, a stable single-lobe far-field pattern along the junction at the power level of more than 10 mW, and an amount of astigmatism below 20 ..mu..m. It is also shown that a thin active layer thickness is desirable to achieve a stable lateral mode. The main feature of the tapered-stripe structure is that it offers an additional degree of freedom in controlling the beam spot size and the radius of curvature of the phase front separately, by varying the widths as well as the length of the tapered stripe.
- Research Organization:
- Semiconductor Research Department, Semiconductor Group, Sony Corporation, Atsugi Plant, 4-14-1 Asahi-cho, Atsugi-shi 243, Japan
- OSTI ID:
- 5853780
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 54:8; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Analysis of astigmatism of gain guided laser with a tapered-stripe geometry
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Journal Article
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Fri Nov 30 23:00:00 EST 1984
· J. Appl. Phys.; (United States)
·
OSTI ID:6354599
Dependence of astigmatism, far-field pattern, and spectral envelope width on active layer thickness of gain guided lasers with narrow stripe geometry
Journal Article
·
Fri Jun 15 00:00:00 EDT 1984
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6752286
Effect of an active layer thickness on lateral and longitudinal modes of a gain guiding laser with a tapered stripe structure
Journal Article
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Mon Aug 01 00:00:00 EDT 1983
· Appl. Phys. Lett.; (United States)
·
OSTI ID:6129163
Related Subjects
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
BEAM PROFILES
CONFIGURATION
CURRENTS
DATA
DIMENSIONS
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GAIN
GEOMETRICAL ABERRATIONS
IMAGES
INFORMATION
LASERS
LAYERS
NUMERICAL DATA
OSCILLATION MODES
POWER RANGE 1-10 MW
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
THICKNESS
WAVEGUIDES
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
BEAM PROFILES
CONFIGURATION
CURRENTS
DATA
DIMENSIONS
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GAIN
GEOMETRICAL ABERRATIONS
IMAGES
INFORMATION
LASERS
LAYERS
NUMERICAL DATA
OSCILLATION MODES
POWER RANGE 1-10 MW
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
THICKNESS
WAVEGUIDES