Analysis of astigmatism of gain guided laser with a tapered-stripe geometry

Journal Article · Sat Dec 01 04:00:00 EST 1984 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.333870· OSTI ID:6354599

Mamine, T; Oda, T; Yoneyama, O

The astigmatism of the tapered-stripe (TAPS) laser has been analyzed. Calculating the near-field spot size and the radius of curvature in the tapered-stripe region, the astigmatism is determined by using the expression of D = R/sub e/ (1+(lambdaR/sub e// ..pi..w/sup 2//sub e/)/sup 2/)/sup -1/. In our formalism we assume that the gain profile is parabola and the near-field spot size at the facet is determined by the diffusion length of injected carriers. So far as these assumptions are valid, it is concluded that the amount of astigmatism is reduced with the length of tapered stripe, using the refractive index change due to the band-edge absorption of -10/sup -2/. The fundamental characteristics of the gain guided laser with TAPS structure such as the astigmatism, far-field radiation pattern, and the spontaneous emission factor are shown to be controlled by properly designing the stripe geometry and the thickness of the active layer.

• Research Organization: Semiconductor Research Department, Semiconductor Group, Sony Corporation, Atsugi-Plant, 4-14-1 Asahi-cho, Atsugi-shi 243, Japan
• OSTI ID: 6354599
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 56:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
DIMENSIONS
GAIN
GEOMETRICAL ABERRATIONS
LASERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
THICKNESS