Trapping parameters of dangling bonds in hydrogenated amorphous silicon
Journal Article
·
· Appl. Phys. Lett.; (United States)
The mobility, lifetime, and capture cross sections for the trapping of electrons and holes at dangling bond defects in a-Si:H are measured using time-of-flight transient photoconductivity. The magnitude obtained for the product ..mu..tauN/sub s/ is 3.5 x 10/sup 8/ +- 25% cm/sup -1/ V/sup -1/ and 4 x 10/sup 7/ +- 50% cm/sup -1/ V/sup -1/ for electrons and holes, respectively. The capture cross section is 4 x 10/sup -15/ cm/sup 2/ for electrons and about 2 x 10/sup -15/ cm/sup 2/ for holes. The results are consistent with the amphoteric nature of neutral dangling bonds.
- Research Organization:
- Xerox Palo Alto Research Center, Palo Alto, California 94304
- OSTI ID:
- 6751641
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 41:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
CARRIER LIFETIME
CARRIER MOBILITY
CHEMICAL BONDS
CHEMICAL REACTIONS
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EXPERIMENTAL DATA
FERMIONS
HOLES
HYDROGENATION
INFORMATION
LEPTONS
LIFETIME
MOBILITY
NUMERICAL DATA
PARAMETRIC ANALYSIS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
TIME-OF-FLIGHT METHOD
TRANSIENTS
TRAPPING
360603* -- Materials-- Properties
AMORPHOUS STATE
CARRIER LIFETIME
CARRIER MOBILITY
CHEMICAL BONDS
CHEMICAL REACTIONS
CROSS SECTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
EXPERIMENTAL DATA
FERMIONS
HOLES
HYDROGENATION
INFORMATION
LEPTONS
LIFETIME
MOBILITY
NUMERICAL DATA
PARAMETRIC ANALYSIS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
SEMIMETALS
SILICON
TIME-OF-FLIGHT METHOD
TRANSIENTS
TRAPPING