Role of dangling-bond defects in early recombination in hydrogenated amorphous silicon
Journal Article
·
· Phys. Rev. B: Condens. Matter; (United States)
Relaxation of photoexcited carriers is studied in a-Si:H with the use of photoinduced ir absorption. The role of the dangling-bond defect in recombination is investigated with samples of defect density from 10/sup 15/ to >10/sup 18/ cm/sup -3/. We find that during the first microsecond the dangling bond does not cause rapid recombination, but rather actually slows recombination by acting indirectly through its influence on the density and shape of the exponential distribution of states near the band edge.
- Research Organization:
- Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
- OSTI ID:
- 6229968
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 27:4; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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