Dangling-bond relaxation and deep-level measurements in hydrogenated amorphous silicon

Journal Article · Wed Sep 15 00:00:00 EDT 1993 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.48.8667· OSTI ID:6145455

Branz, H M ^[1]; Schiff, E A ^[2]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
2. Department of Physics, Syracuse University, Syracuse, New York 13244 (United States)

We present a new perspective on defect levels in hydrogenated amorphous silicon ([ital a]-Si:H) that unifies relaxation effects inferred from two recent experiments. In particular, we show how earlier calculations of dangling-bond relaxation can account for both the level deepening effect reported in transient capacitance measurements and the shallowing effect reported in transient photocurrent measurements under optical bias. The former is due to dangling-bond relaxation toward a pyramidal bonding configuration, and the latter to relaxation toward a planar configuration. We comment on the many-body nature of the remarkably slow kinetics of defect relaxation.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6145455
• Journal Information: Physical Review, B: Condensed Matter; (United States), Vol. 48:12; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ELECTRIC CONDUCTIVITY
HYDROGENATION
AMORPHOUS STATE
EXPERIMENTAL DATA
KINETICS
RELAXATION
CHEMICAL REACTIONS
DATA
ELECTRICAL PROPERTIES
ELEMENTS
INFORMATION
NUMERICAL DATA
PHYSICAL PROPERTIES
SEMIMETALS
360606* - Other Materials- Physical Properties- (1992-)