Observation of slow dangling-bond relaxation in [ital p]-type hydrogenated amorphous silicon

Journal Article · Sun Jan 15 04:00:00 EST 1995 · Physical Review, B: Condensed Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.51.2173· OSTI ID:6620085

Carlen, M W; Xu, Y; Crandall, R S ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

Using junction-capacitance methods, we study the thermal charge emission of holes trapped in the dangling-bond defect [ital D] of [ital p]-type [ital a]-Si:H. Over a significant temperature range, we find a linear temperature-independent relation between emission time and the residence time of the hole on the [ital D] defect. We attribute this characteristic to a structural-relaxation process that is slow in disordered materials.

• DOE Contract Number: AC36-83CH10093
• OSTI ID: 6620085
• Journal Information: Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 51:4; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
AMORPHOUS STATE
DEFECTS
ELEMENTS
HYDROGEN
MATERIALS
NONMETALS
P-TYPE CONDUCTORS
RELAXATION
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
TEMPERATURE DEPENDENCE