Potential fluctuations due to inhomogeneity in hydrogenated amorphous silicon and the resulting charged dangling-bond defects
- Solar Energy Research Institute, Golden, Colorado 80401 (USA)
- University of North Carolina, Chapel Hill, NC (USA)
We consider the thermodynamic equilibrium statistics of the dangling-bond'' undercoordination defect in undoped hydrogenated amorphous silicon ({ital a}-Si:H), assuming that material inhomogeneity causes electrostatic potential fluctuations whose peak-to-peak magnitude is greater than the (positive) effective correlation energy. We show that the fluctuations cause the formation of significant concentrations of charged dangling-bond defects. The negative defects form in regions of high potential and have transition energies below the Fermi energy ({ital E}{sub {ital F}}). The positive defects form in regions of low potential and have transitions above {ital E}{sub {ital F}}. We discuss evidence for the model and consequences of the charged dangling-bond defects for electron-spin resonance, transport, and photostability in {ital a}-Si:H.
- DOE Contract Number:
- AC02-83CH10093
- OSTI ID:
- 6333436
- Journal Information:
- Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 42:12; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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