Comment on Excitation-energy dependence of optically induced ESR in a -Si:H''

Journal Article · Sun Apr 15 00:00:00 EDT 1990 · Physical Review, B: Condensed Matter; (USA)

DOI:https://doi.org/10.1103/PhysRevB.41.7887· OSTI ID:6904087

Branz, H M ^[1]

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1. Solar Energy Research Institute, 1617 Cole Boulevard, Golden, Colorado 80401 (USA)

The infrared light-induced electron-spin-resonance (LESR) data of Ristein {ital et} {ital al}. (Phys. Rev. B 40, 88 (1989)) are reinterpreted. A model of undoped hydrogenated amorphous silicon ({ital a}-Si:H) including more {ital charged} than {ital neutral} dangling-bond defects yields a natural explanation of the experimental results. These LESR data are the most direct experimental evidence to date for the existence of bulk charged dangling bonds in undoped {ital a}-Si:H at electronic equilibrium.

• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6904087
• Journal Information: Physical Review, B: Condensed Matter; (USA), Journal Name: Physical Review, B: Condensed Matter; (USA) Vol. 41:11; ISSN PRBMD; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
AMORPHOUS STATE
CHEMICAL BONDS
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELECTRONIC STRUCTURE
HYDRIDES
HYDROGEN COMPOUNDS
INFRARED RADIATION
MAGNETIC RESONANCE
MAGNETO-OPTICAL EFFECTS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
RADIATIONS
RESONANCE
SILANES
SILICON COMPOUNDS