Influence of dangling bond defects on recombination in a-Si:H

Conference · Sat Jun 01 04:00:00 EDT 1985

OSTI ID:6466399

Dersch, H; Skumanich, A; Amer, N M

Time resolved photoinduced absorption (PIA) and steady state photoconductivity experiments (PC) are used to study recombination processes in electron-irradiated hydrogenated amorphous silicon (a-Si:H). Defect densities measured by ESR range from 5 x 10/sup 15//cm/sup 3/ to 10/sup 18//cm/sup 3/. It is found that while increasing the dangling bond density reduces the PC, the PIA decay rate increases. The results are discussed in the context of a recombination model where the defect density determines whether the carriers recombine through a fast bimolecular or a slower monomolecular process.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6466399
• Report Number(s): LBL-20184; CONF-8509201-2; ON: DE86002874
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ABSORPTION SPECTRA
AMORPHOUS STATE
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPIN RESONANCE
HYDRIDES
HYDROGEN COMPOUNDS
MAGNETIC RESONANCE
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
RECOMBINATION
RESONANCE
SILANES
SILICON COMPOUNDS
SPECTRA