Influence of dangling-bond defects on recombination in a-Si:H

Journal Article · Wed May 15 04:00:00 EDT 1985 · Phys. Rev. B: Condens. Matter; (United States)

DOI:https://doi.org/10.1103/PhysRevB.31.6913· OSTI ID:5701208

Dersch, H; Skumanich, A; Amer, N M

Time-resolved photoinduced absorption (PIA) and steady-state photoconductivity (PC) experiments are used to study recombination processes in electron-irradiated hydrogenated amorphous silicon (a-Si:H). Defect densities measured by ESR range from 5 x 10/sup 15//cm/sup 3/ to 10/sup 18//cm/sup 3/. It is found that while increasing the dangling-bond density reduces the PC, the PIA decay rate increases. The results are discussed in the context of a recombination model where the defect density determines whether the carriers recombine through a fast bimolecular or a slower monomolecular process.

• Research Organization: Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 5701208
• Journal Information: Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 31:10; ISSN PRBMD
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ABSORPTIVITY
CHARGE CARRIERS
CHEMICAL BONDS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON SPIN RESONANCE
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
HYDRIDES
HYDROGEN COMPOUNDS
LEPTONS
MAGNETIC RESONANCE
OPTICAL PROPERTIES
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PHOTOCONDUCTIVITY
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECOMBINATION
RESONANCE
SILANES
SILICON COMPOUNDS