Dependence of recombination kinetics on photoexcitation density in a-Si:H
Conference
·
OSTI ID:5869013
Using pulsed excitation we observe a strong correlation between the recombination kinetics transition (monomolecular-to-bimolecular) and the optical absorption exponential (Urbach) edge. This correlation is observed over a wide range of Si dangling bond defect density in undoped, singly doped and compensated material. The results show that deep gap-states do not determine the excitation density at which the transition occurs. An important implication of these results is that deep gap-states do not play a major role in early recombination in a-Si:H.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5869013
- Report Number(s):
- LBL-16453; CONF-830895-3; ON: DE83016706
- Country of Publication:
- United States
- Language:
- English
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