Effects of dopants and defects on light-induced metastable states in a-Si:H
Using photothermal deflection spectroscopy we measure the gap-state optical absorption of light-induced metastable defects in undoped, singly-doped, and compensated a-Si:H. We observe an enhancement in the gap-state absorption after illumination which is shown to be due to the creation of new silicon dangling-bond defects and not to a shift in the Fermi level. For singly-doped material, the number of light-induced defects scales with dopant concentration, while full compensation (counter doping) drastically minimizes the density of these defects. The results provide evidence that the doping level influences the light-induced defect formation mechanism, and imply that simply breaking Si--Si bonds may not be the primary mechanism.
- Research Organization:
- Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
- OSTI ID:
- 5941684
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 31:4; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ABSORPTION SPECTRA
AMORPHOUS STATE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DATA
DOPED MATERIALS
ELECTRIC DISCHARGES
ENERGY GAP
ENERGY LEVELS
EXCITED STATES
EXPERIMENTAL DATA
FILMS
GLOW DISCHARGES
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
MATERIALS
METASTABLE STATES
NUMERICAL DATA
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
SILANES
SILICON COMPOUNDS
SPECTRA
SPECTROSCOPY