Optical properties and correlation energy of defects in a-Ge:H
Conference
·
OSTI ID:5751791
Gap-state optical absorption of undoped and doped a-Ge:H has been measured using photothermal deflection spectroscopy. We show that the absorption is due to Ge dangling bond defects whose energy lies approx. 0.5 eV below the conduction band. We determine the correlation energy of the defect to be approx. 0.1 eV. Unlike a-Si:H, gap-state absorption of a-Ge:H shows little or no change after intense illumination.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5751791
- Report Number(s):
- LBL-16454; CONF-830895-4; ON: DE83016697
- Country of Publication:
- United States
- Language:
- English
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