Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopy
Journal Article
·
· Phys. Rev. B: Condens. Matter; (United States)
We have measured the subgap otpical absorption of undoped, singly doped, and compensated hydrogenated amorphous silicon down to 0.6 eV using the sensitive technique of photothermal deflection spectroscopy. We show that this absorption is due to silicon dangling-bond defects located approx.1.4 eV below the conduction band. While doping also creates defects approx.1.4 eV below the conduction band, compensation removes them. The results suggest that for the undoped material the density-of-states maximum found in field-effect measurements is due to silicon dangling bonds.
- Research Organization:
- Applied Physics and Laser Spectroscopy Group, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720
- OSTI ID:
- 5227006
- Journal Information:
- Phys. Rev. B: Condens. Matter; (United States), Journal Name: Phys. Rev. B: Condens. Matter; (United States) Vol. 25:8; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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