Density of gap states of silicon grain boundaries determined by optical absorption
The results of optical absorption measurements on fine-grain polycrystalline-silicon thin films indicate that the singly occupied dangling silicon bond lies 0.65 +- 0.15 eV below the conduction-band minimum in the grain boundary. The grain boundary band gap is approx.1.0 eV and there is evidence for exponential tailing of the band edges. The optical absorption was determined by photothermal deflection spectroscopy. The dangling silicon bond density has been measured on polycrystalline-silicon thin films as a function of hydrogen passivation of the grain boundaries and on silicon-on-saphhire films. The optical absorption exhibits a defect shoulder which varies as the dangling bond density.
- Research Organization:
- Xerox Palo Alto Research Center, Palo Alto, California 94304
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 5925366
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 43:2; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ABSORPTION
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CHEMICAL BONDS
CORUNDUM
CRYSTAL STRUCTURE
CRYSTALS
DATA
DIMENSIONS
ELEMENTS
ENERGY GAP
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
FILMS
GRAIN BOUNDARIES
HYDROGEN
INFORMATION
MICROSTRUCTURE
MINERALS
NONMETALS
NUMERICAL DATA
OPTICAL PROPERTIES
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PASSIVATION
PHYSICAL PROPERTIES
POLYCRYSTALS
SAPPHIRE
SEMIMETALS
SILICON
SPECTROSCOPY
THICKNESS