Effects of compensation on light-induced metastable defects in a-Si:H
Conference
·
OSTI ID:5918100
The effects of compensation on light-induced defects in a-Si:H have been investigated using photothermal deflection spectroscopy. We show that fully compensated material exhibits the smallest increase in defects after illumination. Departure from full compensation leads to a significant rise in the defect density. The results indicate that the observed change in the density of defects is due to new Si dangling bonds and not to Fermi level shifts. The implication of these findings for solar cell technology is discussed.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA); Xerox Palo Alto Research Center, CA (USA)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 5918100
- Report Number(s):
- LBL-16452; CONF-830895-5; ON: DE83016696
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
ABSORPTION SPECTRA
AMORPHOUS STATE
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HYDROGEN ADDITIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360603 -- Materials-- Properties
ABSORPTION SPECTRA
AMORPHOUS STATE
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HYDROGEN ADDITIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA