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Effects of compensation on light-induced metastable defects in a-Si:H

Conference ·
OSTI ID:5918100

The effects of compensation on light-induced defects in a-Si:H have been investigated using photothermal deflection spectroscopy. We show that fully compensated material exhibits the smallest increase in defects after illumination. Departure from full compensation leads to a significant rise in the defect density. The results indicate that the observed change in the density of defects is due to new Si dangling bonds and not to Fermi level shifts. The implication of these findings for solar cell technology is discussed.

Research Organization:
Lawrence Berkeley Lab., CA (USA); Xerox Palo Alto Research Center, CA (USA)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
5918100
Report Number(s):
LBL-16452; CONF-830895-5; ON: DE83016696
Country of Publication:
United States
Language:
English