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Diffusion length and collection width for the evaluation of a-Si

Technical Report ·
OSTI ID:6748199
;
Using the liquid Schottky contact, the surface photovoltage technique is applied to a variety of glow discharge a-Si:H films to measure collection width, diffusion length and depletion width. These measures are also seen to be a sensitive method for studying light-soak changes. Finally, estimates of the density of states at the Fermi level have been made.
Research Organization:
Solar Energy Research Inst., Golden, CO (USA); Tulane Univ., New Orleans, LA (USA)
DOE Contract Number:
AC02-77CH00178
OSTI ID:
6748199
Report Number(s):
SERI/TP-212-1738; CONF-820906-5; ON: DE83000121
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
ANNEALING
DATA
DEPLETION LAYER
DIFFUSION LENGTH
DIMENSIONS
ELEMENTS
ENERGY LEVELS
ENERGY-LEVEL DENSITY
EXPERIMENTAL DATA
FERMI LEVEL
HEAT TREATMENTS
INFORMATION
LAYERS
LENGTH
NUMERICAL DATA
SEMIMETALS
SILICON