Collection length of holes in a-Si:H by surface photovoltage using a liquid Schottky barrier

Journal Article · Mon Mar 01 04:00:00 EST 1982 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.93118· OSTI ID:5737753

Moore, A R

In a surface photovoltage determination of the collection length of holes in undoped amorphous Si:H, the ac surface photovoltage has been picked up by the use of a liquid Schottky barrier. The redox couple quinone-hydroquinone proved the best liquid. Simultaneous illumination with a bias light of up to 1 sun removes most of the internal barrier field allowing measurement of the ambipolar diffusion length. Values in the range 0.01--0.8 ..mu..m are found depending on the conditions of sample preparation.

• Research Organization: RCA Laboratories Princeton, New Jersey 08540
• OSTI ID: 5737753
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:5; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ALTERNATING CURRENT
AMORPHOUS STATE
AROMATICS
CURRENTS
DATA
DIFFUSION LENGTH
DIMENSIONS
ELECTRIC CURRENTS
FLUIDS
HOLES
HYDRIDES
HYDROGEN COMPOUNDS
INFORMATION
LENGTH
LIQUIDS
ORGANIC COMPOUNDS
ORGANIC OXYGEN COMPOUNDS
PHOTOELECTROMAGNETIC EFFECTS
PHOTOVOLTAIC EFFECT
POTENTIALS
QUINONES
SAMPLE PREPARATION
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILANES
SILICON COMPOUNDS
SURFACES