Amplified spontaneous emission and gain characteristics of Fabry-Perot and traveling wave-type semiconductor laser amplifiers

Journal Article · Mon Aug 01 04:00:00 EDT 1988 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/3.7080· OSTI ID:6742484

Thylen, L

Semiconductor laser amplifiers are investigated with respect to amplified spontaneous emission power and gain characteristics. The influence of the spontaneous emission coefficient, input power, and facet reflectivity on amplifier saturation characteristics is analyzed.

• Research Organization: Univ. of California, Berkeley, CA (US)
• OSTI ID: 6742484
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:8; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
AMPLIFIERS
ELECTRONIC EQUIPMENT
EMISSION
EQUIPMENT
GAIN
LASERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TECHNOLOGY ASSESSMENT