Homogeneous gain saturation in 1. 5. mu. m InGaAsP traveling-wave semiconductor laser amplifiers

Journal Article · Mon Aug 10 04:00:00 EDT 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98424· OSTI ID:6415448

Mukai, T; Inoue, K; Saitoh, T

Spectral line broadening in semiconductor lasers is studied experimentally through the gain saturation characteristics of 1.5 ..mu..m InGaAsP traveling-wave laser amplifiers. Wide signal gain spectrum under the injection of an intense saturating signal is measured using a weak probe signal. The saturated signal gain spectrum is found to coincide exactly with the unsaturated spectrum under a less biased condition, thus verifying that the semiconductor laser gain saturates homogeneously over the entire gain spectrum. Cross-saturation characteristics between the two signal channels having identical input powers are also investigated and found to be in good agreement with theoretical calculations based on the homogeneous gain model. The degree of gain saturation is confirmed to be uniquely determined by the total output power from both channels.

• Research Organization: NTT Electrical Communications Laboratories, Midori-cho 3-9-11, Musashino-shi, Tokyo 180, Japan
• OSTI ID: 6415448
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:6; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
DATA
ELECTRONIC EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
LINE BROADENING
NUMERICAL DATA
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POWER
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS