1. 5. mu. m GaInAsP traveling-wave semiconductor laser amplifier

Journal Article · Mon Jun 01 04:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073403· OSTI ID:6409959

Saitoh, T; Mukai, T

This paper presents a theoretical and experimental study in terms of small-signal gain, signal gain saturation, and noise characteristics of a 1.5 ..mu..m GaInAsP traveling-wave amplifier (TWA), realized through the application of SiO/sub x/ film antireflection coatings. This TWA, having a residual facet reflectivity of 0.04 percent, exhibits a wide, flat signal gain spectrum and a saturation output power of +7 dBm at a 20 dB signal gain. The TWA also has a noise figure of 5.2 dB, which is the smallest value reported for semiconductor laser amplifiers. The experimental results are confirmed to be in good agreement with the theoretical predictions based on the mulitmode traveling-wave rate equation in conjunction with the photon statistic master equation analysis, which takes into account the amplifier material and device structural parameters.

• Research Organization: NTT Electrical Communications Labs., 3-9-11, Midori-cho, Musashino-shi, Tokyo 180
• OSTI ID: 6409959
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
AMPLIFICATION
AMPLIFIERS
ARSENIC COMPOUNDS
ARSENIDES
DATA ANALYSIS
DESIGN
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
EQUATIONS
EQUIPMENT
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
MASSLESS PARTICLES
NOISE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTONS
PHYSICAL PROPERTIES
PNICTIDES
REFLECTIVITY
RESEARCH PROGRAMS
SATURATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SIGNALS
SURFACE PROPERTIES
TRAVELLING WAVES
WAVELENGTHS