skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: 1. 3. mu. m semiconductor laser power amplifier

Journal Article · · IEEE Photonics Technol. Lett.; (United States)
DOI:https://doi.org/10.1109/68.87875· OSTI ID:6252525

The feasibility of a semiconductor laser power amplifier is demonstrated. In a 3.4 Gbit/s system, the -14.5 dBm input from a directly modulated DFB laser is boosted to +10.3 dBm of which +4.8 dBm is coupled into the transmission fiber. The penalty, caused by amplifier noise and pattern effects due to gain saturation, is less than 0.5 dB.

Research Organization:
AT and T Bell Labs., Murray Hill, NJ (US); AT and T Bell Labs., Allentown, PA (US)
OSTI ID:
6252525
Journal Information:
IEEE Photonics Technol. Lett.; (United States), Vol. 1:1
Country of Publication:
United States
Language:
English

Similar Records

1. 5. mu. m GaInAsP traveling-wave semiconductor laser amplifier
Journal Article · Mon Jun 01 00:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States) · OSTI ID:6252525

Heterodyne gain and noise measurement of a 1. 5. mu. m resonant semiconductor laser amplifier
Journal Article · Thu May 01 00:00:00 EDT 1986 · IEEE J. Quant. Electron.; (United States) · OSTI ID:6252525

25 Gbit/s differential phase-shift-keying signal generation using directly modulated quantum-dot semiconductor optical amplifiers
Journal Article · Mon May 25 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:6252525