Performance degradations of multigigabit-per-second NRZ/RZ lightwave systems due to gain saturation in traveling-wave semiconductor optical amplifiers

Journal Article · Sun Oct 01 00:00:00 EDT 1989 · IEEE Photonics Technology Letters; (USA)

OSTI ID:5647730

Goossen, K W; Boyd, G D; Cunningham, J E; Jan, W Y; Miller, D A.B.; Chemla, D S; Lum, R M ^[1]

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1. Bellcore, Red Bank, NJ (US)

A nonlinear model for a traveling-wave semiconductor optical amplifier has been developed using computer simulation techniques. The model has been used to determine eye closure degradations for 2.4 and 10 Gbits/s NRZ/RZ lightwave systems due to gain saturation effects in the optical amplifier. At 10 Gbits/s, with a carrier lifetime of 300 ps, the results indicate that the penalty is less than 1 dB for both NRZ and RZ systems provided that the ratio of the input power (P/sub in/) to the saturation output power (P/sub sat/) is less than - 17 dB. The NRZ system penalty will be slightly larger than the RZ penalty if P/sub in//P/sub sat/ is larger than - 17 dB. For example, with P/sub in//P/sub sat/ = - 10 dB, the NRZ system penalty is about 2.8 dB versus 2dB for the RZ system. The system penalty at 2.4 Gbits/s is slightly less than that at 10 Gbits/s. At P/sub in//P/sub sat/ = - 10 dB, the NRZ system penalty is about 2.5 dB versus 1.5 dB for RZ.

• OSTI ID: 5647730
• Journal Information: IEEE Photonics Technology Letters; (USA), Journal Name: IEEE Photonics Technology Letters; (USA) Vol. 1:10; ISSN IPTLE; ISSN 1041-1135
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300 -- Engineering-- Lasers-- (-1989)
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
99 GENERAL AND MISCELLANEOUS
990220 -- Computers
Computerized Models
& Computer Programs-- (1987-1989)
AMPLIFICATION
AMPLIFIERS
CARRIER LIFETIME
COMPUTERIZED SIMULATION
ELECTRONIC EQUIPMENT
EQUIPMENT
GAIN
LASERS
LIFETIME
OPTICAL SYSTEMS
PERFORMANCE
SEMICONDUCTOR DEVICES
SIMULATION
TRAVELLING WAVES