Effects of gain ripples in semiconductor optical amplifiers on very high speed lightwave systems
- Bellcore, Red Bank, NJ (US)
In this paper, the authors report on experimental and theoretical investigations of an 11 Gbit/s lightwave system employing a 1500 nm traveling wave amplifier with gain ripples of larger than 1.7 dB. They found that at 11 Gbits/s, severe system degradations in the form of intersymbol interference and large extinction ratio penalty occur as the gain ripple increases, particularly for laser wavelengths located on the positive slope of the gain curve. Complete eye closure can occur in the worst situation. The InGaAsP traveling-wave semiconductor amplifier employed in the experiment is a buried-heterostructure device 500 {mu}m long with a gain peak at 1551 nm, fabricated with 9{degrees} angle facets with ZrO{sub 2} anti-reflection coating on both sides.
- OSTI ID:
- 6923393
- Journal Information:
- IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA), Journal Name: IEEE Photonics Technology Letters (Institute of Electrical and Electronics Engineers); (USA) Vol. 2:1; ISSN IPTLE; ISSN 1041-1135
- Country of Publication:
- United States
- Language:
- English
Similar Records
Group delay dispersion measurements in InGaAsP 1. 3-/mu/m optical amplifiers
Waveform distortion due to near-end reflections in direct detection lightwave systems using single-mode semiconductor lasers
Related Subjects
360603 -- Materials-- Properties
42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
440600 -- Optical Instrumentation-- (1990-)
47 OTHER INSTRUMENTATION
AMPLIFICATION
AMPLIFIERS
ANTIREFLECTION COATINGS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
COATINGS
DATA
ELECTRONIC EQUIPMENT
EQUIPMENT
EXPERIMENTAL DATA
FABRICATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
OPTICAL SYSTEMS
OXIDES
OXYGEN COMPOUNDS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
PULSE AMPLIFIERS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SOLID STATE LASERS
THEORETICAL DATA
TRANSITION ELEMENT COMPOUNDS
TRAVELLING WAVES
WAVELENGTHS
ZIRCONIUM COMPOUNDS
ZIRCONIUM OXIDES