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Transfer matrix analysis of the amplified spontaneous emission of DFB semiconductor laser amplifiers

Journal Article · · IEEE J. Quant. Electron.; (United States)
DOI:https://doi.org/10.1109/3.7077· OSTI ID:6615929
;  [1]
  1. Bell-Northern Research, Ottawa, Ontario K1Y 4H7 (CA)
Analytical expressions ware derived for the amplified spontaneous emission of a DFB semiconductor laser amplifier with reflective cavity ends. The analysis is extended to a multisection DFB structure including a phase-shifted DFB semiconductor laser amplifier. It is shown that the spontaneous emission power per unit frequency bandwidth emitted from one facet is proportional to the transmission gain and to a quantity which at threshold becomes the inverse of the differential quantum efficiency of the other facet. The analysis is applied to two practical cases: 1) calculation of emission spectra of a DFB semiconductor laser biased below the threshold, and 2) assessment of the S/N performance of DFB semiconductor laser amplifiers. In the first case, it is shown that, although the spontaneous emission spectrum is mainly determined by the transmission gain spectrum, the difference between the two spectra becomes large in the stopband. In addition, an experimental method is outlined by which the complex coupling coefficient in second-order DFB lasers can be determined from the spontaneous emission spectrum below the the threshold. In the second case, the equivalent noise bandwidth and the excess noise coefficient are analyzed for DFB laser amplifiers with and without a lambda/4 phase shift. The minimum detectable power at 10/sup -9/ BER is compared to those of traveling-wave- and Fabry-Perot-type amplifiers.
OSTI ID:
6615929
Journal Information:
IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. 24:8; ISSN IEJQA
Country of Publication:
United States
Language:
English

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