Measurements of ion-implantation damage in GaP

Conference · Fri Jan 01 04:00:00 EST 1982

OSTI ID:6733135

Myers, D R; Peercy, P S; Gourley, P L

We have applied stress measurements using the cantilever beam technique and Raman spectroscopy to characterize the dose dependence of damage production for He/sup +/, C/sup +/, or Ar/sup +/ implants into GaP. Stress increases monotonically with dose until a species-dependent critical dose is reached. Above that dose, the material yields at an integrated lateral stress of approx. 2 x 10/sup 5/ dynes/cm, corresponding to an expansion of approx. 1% in the implanted volume. The dose dependence of stress scales well with the volume density of ion energy deposited into atomic collisions. Raman measurements indicate that the material is still crystalline when the yield stress is reached.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6733135
• Report Number(s): SAND-82-1338C; CONF-821107-18; ON: DE83002140
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON IONS
BEAMS
CARBON IONS
CHARGED PARTICLES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HELIUM IONS
ION BEAMS
ION IMPLANTATION
IONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RAMAN SPECTRA
SPECTRA
STRESSES