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Ion implantation effects in crystalline quartz

Conference · · Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
 [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
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Cantilever beam measurements of the stress induced in crystalline quartz by implantation of 150 keV Ar and/or 250 keV He have shown that the data scale with energy into collisional processes. The damage state induced by the Ar implants does not lend itself to efficient utilization of the electronic component of subsequent He implantation in producing further disorder. The damage depth has been measured (optically) for a number of ions (1 × 1016 250 keV/cm2) and has been found to vary (relative to TRIM values) from about 0.63Rp for He to about 1.84Rp for Xe. RBS measurements of range for Ar to Au give values in fair agreement with the optical values. The ratio of the measured (optical) ranges to the predicted (TRIM) ranges, when plotted as a function of collisional energy deposition, indicates that extended damage (beyond ion range) occurs for deposition energies > ~ 1 x 1022 keV/cm3. The damage persists even after 900 ° C anneals. The effects of ion-induced stress may be an important factor in the establishment of the extended damage state.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC04-76DP00789
OSTI ID:
5469152
Report Number(s):
SAND--91-0863C; CONF-910646--3; ON: DE91016192
Journal Information:
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms, Journal Name: Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms Journal Issue: 1-4 Vol. 65; ISSN 0168-583X
Publisher:
Elsevier
Country of Publication:
United States
Language:
English

References (8)

Sensitive Technique for Studying Ion‐Implantation Damage journal June 1971
Ion implantation effects in glasses journal January 1982
Accurate i n s i t u measurement of near-surface volume dilatation in irradiated silica through capacitance monitoring of cantilever deflection journal May 1983
Radiation damage in ion-implanted quartz crystals. II. Annealing behaviour journal April 1983
Defects in natural and synthetic quartz∗ journal June 1960
Radiation damage in ion-implanted quartz crystals. Part I: Nuclear and electronic energy deposition journal March 1983
Radiation defects and optical properties of ion implanted silicon dioxide journal January 1980
Compaction of ion‐implanted fused silica journal January 1974

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Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARGON IONS
CHALCOGENIDES
CHARGED PARTICLES
HELIUM IONS
ION IMPLANTATION
IONS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
QUARTZ
RADIATION EFFECTS
SILICON COMPOUNDS
SILICON OXIDES
STRESSES