Damage resistant optical coatings prepared using high temperature, plasma chemical-vapor-deposition

Conference · Wed May 02 04:00:00 EDT 1990

OSTI ID:6729906

Campbell, J H; Emmett, J L; Brusasco, R M; Rainer, F ^[1]; Kersten, R Th; Paquet, V; Etzkorn, H W ^[2]

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1. Lawrence Livermore National Lab., CA (USA)
2. Schott Glaswerke, Mainz (Germany, F.R.)

Multilayer dielectric optical coatings, nominally consisting of 1000 or more optical-quarterwave layers, have been prepared by reacting SiCl{sub 4} and a halogenated dopant (e.g. GeCl{sub 4}) with O{sub 2} in a microwave-driven plasma. The dopant concentration is such that the index difference ({Delta}n) between adjacent quarterwave layers is about 0.02 or less. The deposition is carried out at high substrate temperatures (850 to 1100{degree}C) producing a fully dense, fused silica coating. Surface damage thresholds of high reflectivity (HR) coatings prepared by this plasma process are comparable to those for fused silica. For example, at 1.06 {mu}m and 16-ns we measure surface damage thresholds greater than 45 J/cm{sup 2} compared to about 45--60 G/cm{sup 2} for super-polished optical fused silica. 25 refs., 12 figs., 1 tab.

• Research Organization: Lawrence Livermore National Lab., CA (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 6729906
• Report Number(s): UCRL-101769; CONF-8911192--5; ON: DE90015042
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
360204 -- Ceramics
Cermets
& Refractories-- Physical Properties
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CHLORIDES
CHLORINE COMPOUNDS
COATINGS
DEPOSITION
DIELECTRIC MATERIALS
DOPED MATERIALS
ELEMENTS
GERMANIUM
HALIDES
HALOGEN COMPOUNDS
MATERIALS
METALS
MINERALS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PLASMA
REFLECTIVE COATINGS
SILICA
SILICON CHLORIDES
SILICON COMPOUNDS
SILICON OXIDES
SURFACE COATING
VERY HIGH TEMPERATURE