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U.S. Department of Energy
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A high temperature, plasma-assisted chemical vapor deposition system

Conference ·
OSTI ID:6601726
; ; ; ; ;  [1];  [2]
  1. Lawrence Livermore National Lab., CA (USA)
  2. Prototech Research, Inc., Chandler, AZ (USA)
We have designed and built a high-temperature, plasma-assisted, chemical vapor deposition system to deposit multilayer optical coatings of SiO{sub 2} and doped-SiO{sub 2} flat substrates. The coater concept and design is an outgrowth of our recent work with Schott Glasswerke demonstrating the use of plasma assisted CVD to prepare very high damage threshold optical coatings. The coater is designed to deposit up to several thousand alternating quarterwave layers of SiO{sub 2} and doped SiO{sub 2} substrate at deposition rates up to several microns per minute. The substrate is resistively heated to about 1000{degree}C during the deposition phase of the process. The plasma is driven by a 13.56 MHz RF unit capable of producing power densities of up to 140 W cm{sup {minus}3} in the reaction zone. The coater is designed to be adaptable to microwave generated plasmas, as well as RF. Reactant gas flow rates of up to 10 slm can be achieved at a 10 tar operating pressure. Reactants consist of O{sub 2}, SiCl{sub 4} and a volatile halogenated dopant. These gases react in the plasma volume producing SiO{sub 2} with dopant concentrations of up to a few percent. A variable dopant concentration is used to produce index differences between adjacent optical layers.
Research Organization:
Lawrence Livermore National Lab., CA (USA)
Sponsoring Organization:
DOE/DP
DOE Contract Number:
W-7405-ENG-48
OSTI ID:
6601726
Report Number(s):
UCRL-101766; CONF-8911192--7; ON: DE91000260
Country of Publication:
United States
Language:
English